G4MicroElecInelastic_new.cc

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//
// G4MicroElecInelastic_new.cc, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
//                              2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
//                         Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
//                         M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
//
// Based on the following publications
//  - A.Valentin, M. Raine, 
//      Inelastic cross-sections of low energy electrons in silicon
//        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
//        NSS Conf. Record 2010, pp. 80-85
//             https://doi.org/10.1109/NSSMIC.2010.5873720
//
//      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
//        Geant4 physics processes for microdosimetry simulation:
//        very low energy electromagnetic models for electrons in Silicon,
//             https://doi.org/10.1016/j.nimb.2012.06.007
//        NIM B, vol. 288, pp. 66-73, 2012, part A
//        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
//             https://doi.org/10.1016/j.nimb.2012.07.028
//
//  - M. Raine, M. Gaillardin, P. Paillet
//        Geant4 physics processes for silicon microdosimetry simulation: 
//        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
//        NIM B, vol. 325, pp. 97-100, 2014
//             https://doi.org/10.1016/j.nimb.2014.01.014
//
//      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
//        Electron emission yield for low energy electrons: 
//        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
//        Journal of Applied Physics 121 (2017) 215107. 
//               https://doi.org/10.1063/1.4984761
//
//      - P. Caron,
//        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
//        PHD, 16th October 2019
//
//  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
//        Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
//        Extension of MicroElec to very low energies and new materials
//        NIM B, 2020, in review.
//
//
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#include "G4MicroElecInelastic_new.hh"
#include "G4DummyModel.hh"
#include "G4SystemOfUnits.hh"
 
#include "G4Alpha.hh"
#include "G4GenericIon.hh"
 
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using namespace std;
 
G4MicroElecInelastic_new::G4MicroElecInelastic_new(const G4String& processName,
                                           G4ProcessType type)
  : G4VEmProcess (processName, type)
{
  SetProcessSubType(53);
}
 
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G4MicroElecInelastic_new::~G4MicroElecInelastic_new()
{}
 
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G4bool G4MicroElecInelastic_new::IsApplicable(const G4ParticleDefinition& p)
{
  return (&p == G4Electron::Electron() ||
          &p == G4Proton::Proton()  ||
          &p == G4Alpha::Alpha()  ||
          &p == G4GenericIon::GenericIonDefinition());
}
 
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void G4MicroElecInelastic_new::InitialiseProcess(const G4ParticleDefinition* p)
{
  if(!isInitialised) 
  {
    isInitialised = true;
    SetBuildTableFlag(false);
    G4String name = p->GetParticleName();
 
    if(!EmModel(0)) SetEmModel(new G4DummyModel());
    AddEmModel(2, EmModel(0));   
  } 
}
 
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void G4MicroElecInelastic_new::PrintInfo()
{
  // V.I. printout of models is performed by model manager
  //      if this extra printout is needed it should be 
  //      protected by verbosity level
}         
 
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