G4MicroElecInelasticModel_new.hh

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//
// G4MicroElecInelasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
//                              2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
//                         Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
//                         M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
//
// Based on the following publications
//  - A.Valentin, M. Raine, 
//      Inelastic cross-sections of low energy electrons in silicon
//        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
//        NSS Conf. Record 2010, pp. 80-85
//             https://doi.org/10.1109/NSSMIC.2010.5873720
//
//      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
//        Geant4 physics processes for microdosimetry simulation:
//        very low energy electromagnetic models for electrons in Silicon,
//             https://doi.org/10.1016/j.nimb.2012.06.007
//        NIM B, vol. 288, pp. 66-73, 2012, part A
//        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
//             https://doi.org/10.1016/j.nimb.2012.07.028
//
//  - M. Raine, M. Gaillardin, P. Paillet
//        Geant4 physics processes for silicon microdosimetry simulation: 
//        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
//        NIM B, vol. 325, pp. 97-100, 2014
//             https://doi.org/10.1016/j.nimb.2014.01.014
//
//      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
//        Electron emission yield for low energy electrons: 
//        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
//        Journal of Applied Physics 121 (2017) 215107. 
//               https://doi.org/10.1063/1.4984761
//
//      - P. Caron,
//        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
//        PHD, 16th October 2019
//
//  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
//        Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
//        Extension of MicroElec to very low energies and new materials
//        NIM B, 2020, in review.
//
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 
 
#ifndef G4MICROELECINELASTICMODEL_NEW_HH
#define G4MICROELECINELASTICMODEL_NEW_HH 1
 
#include "globals.hh"
#include "G4VEmModel.hh"
#include "G4ParticleChangeForGamma.hh"
#include "G4ProductionCutsTable.hh"
#include "G4MicroElecMaterialStructure.hh"
#include "G4MicroElecCrossSectionDataSet_new.hh"
#include "G4Electron.hh"
#include "G4Proton.hh"
#include "G4GenericIon.hh"
#include "G4ParticleDefinition.hh"
#include "G4LogLogInterpolation.hh"
#include "G4VAtomDeexcitation.hh"
#include "G4NistManager.hh"
 
 
class G4MicroElecInelasticModel_new : public G4VEmModel
{
 
public:
  
  G4MicroElecInelasticModel_new(const G4ParticleDefinition* p = 0,
                const G4String& nam = "MicroElecInelasticModel");
  ~G4MicroElecInelasticModel_new() override;
  
  void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
 
  G4double CrossSectionPerVolume(const G4Material* material,
                 const G4ParticleDefinition* p,
                 G4double ekin,
                 G4double emin,
                 G4double emax) override;
 
  void SampleSecondaries(std::vector<G4DynamicParticle*>*,
             const G4MaterialCutsCouple*,
             const G4DynamicParticle*,
             G4double tmin,
             G4double maxEnergy) override;
 
  G4double DifferentialCrossSection(const G4ParticleDefinition * aParticleDefinition, 
                                    G4double k, G4double energyTransfer, G4int shell);
 
  G4double ComputeRelativistVelocity(G4double E, G4double mass);
 
  G4double ComputeElasticQmax(G4double T1i, G4double T2i, G4double m1, G4double m2);
 
  G4double BKZ(G4double Ep, G4double mp, G4int Zp, G4double EF);
  // compute the effective charge according Brandt et Kitagawa theory
 
  G4double stepFunc(G4double x);
 
  G4double vrkreussler(G4double v, G4double vF);
  
protected:
  G4ParticleChangeForGamma* fParticleChangeForGamma = nullptr;
 
private:
  //
  // private methods
  //  
  G4MicroElecInelasticModel_new & operator=(const  G4MicroElecInelasticModel_new &right);
  G4MicroElecInelasticModel_new(const  G4MicroElecInelasticModel_new&);
  
  G4int RandomSelect(G4double energy,const G4String& particle, G4double originalMass, G4int originalZ );
 
  G4double RandomizeCreatedElectronEnergy(G4double secondaryKinetic);
  
  G4double RandomizeEjectedElectronEnergy(const G4ParticleDefinition * aParticleDefinition,
                      G4double incomingParticleEnergy, G4int shell,
                      G4double originalMass, G4int originalZ) ;
  
  G4double RandomizeEjectedElectronEnergyFromCumulatedDcs(const G4ParticleDefinition*,
                              G4double k, G4int shell);                   
 
  G4double TransferedEnergy(const G4ParticleDefinition*, G4double k,
                G4int ionizationLevelIndex, G4double random);
 
  G4double Interpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
   
  G4double QuadInterpolator( G4double e11, G4double e12, G4double e21, G4double e22, 
                 G4double x11, G4double x12, G4double x21, G4double x22, 
                 G4double t1,  G4double t2,  G4double t,  G4double e);
  //
  // private elements
  // 
  G4String currentMaterial = "";
  G4bool fasterCode = false;
  //deexcitation manager to produce fluo photns and e-
  G4VAtomDeexcitation* fAtomDeexcitation = nullptr;
  G4Material* nistSi = nullptr;
  std::map<G4String,G4double,std::less<G4String> > lowEnergyLimit;
  std::map<G4String,G4double,std::less<G4String> > highEnergyLimit;
  G4bool isInitialised = false;
  G4int verboseLevel = 0;  
  typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
  typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
  typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap; 
  typedef std::map<G4double, std::vector<G4double> > VecMap;
  //Tables for multilayers
  typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
  TCSMap tableTCS; //TCS tables by particle
  typedef std::map<G4String, std::vector<TriDimensionMap>* > dataDiffCSMap;
  dataDiffCSMap eDiffDatatable, pDiffDatatable; //Transfer probabilities (for slower code)
  dataDiffCSMap eNrjTransStorage, pNrjTransStorage; //Transfered energies and corresponding probability (faster code)
  typedef std::map<G4String, std::vector<VecMap>* > dataProbaShellMap;
  dataProbaShellMap eProbaShellStorage, pProbaShellStorage; //Cumulated Transfer probabilities (faster code)
  typedef std::map<G4String, std::vector<G4double>* > incidentEnergyMap;
  incidentEnergyMap eIncidentEnergyStorage, pIncidentEnergyStorage; //Incident energies for interpolation (faster code)
  typedef std::map<G4String, VecMap* > TranfEnergyMap;
  TranfEnergyMap eVecmStorage, pVecmStorage; //Transfered energy for interpolation (slower code)
  typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
  MapStructure tableMaterialsStructures; //Structures of all materials simulated
  G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
  
};
 
#endif