G4MicroElecMaterialStructure.cc

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//
// G4MicroElecMaterialStructure.cc, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
//                              2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
//                         Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
//                          M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
//
// Based on the following publications
//  - A.Valentin, M. Raine, 
//      Inelastic cross-sections of low energy electrons in silicon
//        for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
//        NSS Conf. Record 2010, pp. 80-85
//             https://doi.org/10.1109/NSSMIC.2010.5873720
//
//      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
//        Geant4 physics processes for microdosimetry simulation:
//        very low energy electromagnetic models for electrons in Silicon,
//             https://doi.org/10.1016/j.nimb.2012.06.007
//        NIM B, vol. 288, pp. 66-73, 2012, part A
//        heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
//             https://doi.org/10.1016/j.nimb.2012.07.028
//
//  - M. Raine, M. Gaillardin, P. Paillet
//        Geant4 physics processes for silicon microdosimetry simulation: 
//        Improvements and extension of the energy-range validity up to 10 GeV/nucleon
//        NIM B, vol. 325, pp. 97-100, 2014
//             https://doi.org/10.1016/j.nimb.2014.01.014
//
//      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
//        Electron emission yield for low energy electrons: 
//        Monte Carlo simulation and experimental comparison for Al, Ag, and Si
//        Journal of Applied Physics 121 (2017) 215107. 
//               https://doi.org/10.1063/1.4984761
//
//      - P. Caron,
//        Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
//        PHD, 16th October 2019
//
//  - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
//        Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
//        Extension of MicroElec to very low energies and new materials
//        NIM B, 2020, in review.
//
//
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#include "G4MicroElecMaterialStructure.hh"
#include "G4SystemOfUnits.hh"
 
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G4MicroElecMaterialStructure::G4MicroElecMaterialStructure(const G4String& matName)
{
  materialName = matName;
  if (matName == "Vacuum" || matName == "uum") {
    workFunction = 0;
    initialEnergy = 0;
  }
  else {
    ReadMaterialFile();
  }
  nLevels = energyConstant.size();
}
 
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G4MicroElecMaterialStructure::~G4MicroElecMaterialStructure()
{}
 
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void G4MicroElecMaterialStructure::ReadMaterialFile() 
{
  char *path = std::getenv("G4LEDATA");
  
  if (materialName(0) == 'G' && materialName(1) == '4') {
    //in the case the NIST database is used
    materialName.erase(0, 1);
    materialName.erase(0, 1);
    materialName.erase(0, 1);
  }
  
  std::ostringstream fileName;
  fileName << path << "/microelec/Structure/Data_" + materialName + ".dat";
  std::ifstream fichier(fileName.str().c_str());
  
  int varLength = 0;
  G4String nameParameter;
  
  G4String unitName;    
  G4double unitValue;
  G4double data;
  G4String filler;  
  G4String type;
  
  if (fichier)
    {
      fichier >> filler >> type;
      materialName = filler;
      if (type == "Compound") {isCompound = true; Z = 0; }
      else { isCompound = false; Z = std::stoi(type); }
      while(!fichier.eof()) {
    
    getline(fichier, filler);
    std::stringstream line(filler);
    
    if (filler(0) == '#' || filler.empty()) {continue;}
    
    line >> varLength;
    line >> nameParameter;
    line >> unitName;
    unitValue = ConvertUnit(unitName);
    
    for (int i = 0; i < varLength; i++)
      {
        line >> data;   data = data*unitValue;
        
        if (nameParameter == "WorkFunction") workFunction = data;
        if (nameParameter == "EnergyGap") energyGap = data;
        
        if (nameParameter == "EnergyPeak") energyConstant.push_back(data);
        if (nameParameter == "EnergyLimit") LimitEnergy.push_back(data);
        if (nameParameter == "EADL") EADL_Enumerator.push_back(data);
        
        if (nameParameter == "WeaklyBoundShell")
          {if (data == 0) { isShellWeaklyBoundVector.push_back(false); }
        else {isShellWeaklyBoundVector.push_back(true);}}
        
        if (nameParameter == "WeaklyBoundInitialEnergy") initialEnergy = data;
        
        if (nameParameter == "ShellAtomicNumber") compoundShellZ.push_back(data);
        
        if (nameParameter == "DielectricModelLowEnergyLimit_e") limitInelastic[0]=data;
        if (nameParameter == "DielectricModelHighEnergyLimit_e") limitInelastic[1] = data;
        if (nameParameter == "DielectricModelLowEnergyLimit_p") limitInelastic[2] = data;
        if (nameParameter == "DielectricModelHighEnergyLimit_p") limitInelastic[3] = data;
        
        if (nameParameter == "ElasticModelLowEnergyLimit") limitElastic[0] = data;
        if (nameParameter == "ElasticModelHighEnergyLimit") limitElastic[1] = data;
      }
      }
      fichier.close();  // on ferme le fichier
    }
  else {
    G4String str = "file ";
    str += fileName.str() + " not found!";
    G4Exception("G4MicroElecMaterialStructure::ReadMaterialFile", "em0002", FatalException, str);
  }
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4double G4MicroElecMaterialStructure::Energy(G4int level)
{
  return (level >= 0 && level < nLevels) ? energyConstant[level] : 0.0;
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4double G4MicroElecMaterialStructure::GetZ(G4int Shell)
{
  if (Shell >= 0 && Shell < nLevels) {
    if (!isCompound) return Z;
    else return compoundShellZ[Shell];
  }
  else return 0;
}
 
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G4double G4MicroElecMaterialStructure::ConvertUnit(const G4String& unitName)
{
  G4double unitValue = 0;
  if (unitName == "meV") unitValue = 1e-3*CLHEP::eV;
  else if (unitName == "eV") unitValue = CLHEP::eV;
  else if (unitName == "keV") unitValue = CLHEP::keV;
  else if (unitName == "MeV") unitValue = CLHEP::MeV;
  else if (unitName == "noUnit") unitValue = 1;
  
  return unitValue;
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4double G4MicroElecMaterialStructure::GetLimitEnergy(G4int level)
{
  G4double E = LimitEnergy[level];
  if (IsShellWeaklyBound(level)) { E = energyGap+ initialEnergy; }
  return E;
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4double G4MicroElecMaterialStructure::GetInelasticModelLowLimit(G4int pdg)
{
  G4double res = 0.0;
  if (pdg == 11) res = limitInelastic[0];
  else if (pdg == 2212) res = limitInelastic[2];
  return res;
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4double G4MicroElecMaterialStructure::GetInelasticModelHighLimit(G4int pdg)
{
  G4double res = 0.0;
  if (pdg == 11) res = limitInelastic[1];
  else if (pdg == 2212) res = limitInelastic[3];
  return res;
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
 
G4bool G4MicroElecMaterialStructure::IsShellWeaklyBound(G4int level)
{
  return isShellWeaklyBoundVector[level];
}
 
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....